(73) Asslgnee' Internatlenal Busmess Machmes Pump Circuit with Consideration of Gate-oxide Reliability in Low Corporatlon' Armonk' Ny (us) Voltage Cmos Processes, " Ieee Journal of Solid-state Circuits, Vol
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چکیده
_ _ _ _ _ 41, N0. 5, May 2006, pp. 1100-1107. ( * ) Nonce: subleqw any dlsclalmeri the term Ofthls Ming-Dou Ker, Shih-Lun Chen, Chia-Shen Tsai; “A New Charge patent 1S eXIended 01‘ adjusted under 35 Pump Circuit Dealing With Gate-Oxide Reliability Issue in Low U.S.C. 154(b) by 15 days. Voltage Processes,” IEEE Journal of Solid-State Circuits, ISCAS 2004, pp. 1-321-1-324. 21 A l. N .: 11/614 750 ( ) pp 0 ’ (Continued)
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Design of Charge Pump Circuit With Consideration of Gate-Oxide Reliability in Low-Voltage CMOS Processes
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